Discrete MOSFETs

N-Channel: Standard Power MOSFETs

Product Table

  • VDSS up to 1200V
  • ID(25): 0.1A - 250A
  • Avalanche rated
  • Ultra-low Rds(on) - 5 milliohms

    • N-Channel: Power Mosfets w/fast Intrinsic Diode (HiperFETs)

    Product Table

  • VDSS up 70V to 1200V
  • ID(25): 3A to 340A
  • Avalanche rated and very ruggrd, High dv/dt immunity
  • HiPerFET™ Technology gives Fast, Rugged, equally rated intrinsic Diode
  • Low RDS(on)
  • Q2-Class:Very low gate charge, very fast switching times
  • Q-Class: Low gate charge, fast switching times

    • N-Channel: Depletion Mode MOSFETs

    Product Table

  • VDSS 500V and 1000V
  • ID(25): 0.1A - 20A
  • Avalanche energy rated
  • Ultra-low Rds(on) - 330 milliohms
  • Remain ON at or above zero Gate Voltage

    • N-Channel: Linear "Extended FBSOA" Power MOSFETs

    Product Table

  • VDSS=500V and 1000V
  • ID(25): 24A - 62A
  • RDS(on): 100 mOhms
  • Square SOA, Very rugged
  • Low Qg and Low Rthjc

    • N-Channel: Trench Gate Power MOSFETs

    Product Table

  • Trench Gate MOSFET technology
  • ID(25): 44A to 350A
  • Ultra-Low RDS(on)
  • VDSS: 55V to 300V
  • Can operate from -40°C to 175°C

    • N-Channel: Super Junction COOLMOS™ Power MOSFETs

    Product Table

  • VDSS: 600V and 800V
  • ID(25): 13A to 85A
  • Ultra-Low RDS(on) - 36 milliohms
  • Avalanche energy rated
  • COOLMOS™ MOSFET with FRED Diode (IXKF40N60SCD1)for trr below 70 ns)

    • P-Channel: Standard Power MOSFETs

    Product Table

  • BVDSS= -85V, -100V, -150V, -200V, -500V and -600V
  • ID(25): -8A to -52A
  • TO-220, TO-247, TO-263, TO-3P, TO-268 case style
  • Rugged, square SOA
  • Rugged PolarP Process
  • Low Gate Charge (Qg) for simple drive requirement
  • Low Package Inductance (Easy to drive and protect)
  • High Power Dissipation (Pd)
  • Low Junction to Case Thermal Resistance (RthJc)

    • MOSFET Modules IXYS

    H-Bridge MOSFET Modules

    Product Table

  • Vdss: 100V - 600V
  • ID(25): 38A - 63A
  • Low Rds(on): 25.0 mOhms
  • dv/dt ruggedness, fast reverse diode
  • Low inductive current path
  • Kelvin source terminals for easy drive
  • Isolated ceramic base plate with 2500 V rms isolation

    • Phase-Leg MOSFET Modules

    Product Table

  • Vdss: 75V - 900V
  • ID(25): 45A - 1500A
  • Extremely Low Rds(on): 1.8 mOhms
  • dv/dt ruggedness, fast reverse diode
  • Low inductive current path
  • Kelvin source terminals for easy drive
  • 2500 V rms isolation with ceramic base plate

    • Trench Gate MOSFET Modules

    Product Table

  • Vdss: 40V - 150V
  • ID(25): up to 1500A
  • Very low Rds(on)
  • Optimized fast intrinsic reverse diode
  • Tvj max: 175°C
  • Kelvin source terminals for easy drive
  • min. 1000 V rms Isolation with ceramic base plate (depending on package)

    • Boost and Buck Configurations

    Product Table

  • Vdss: 45V - 600V
  • ID(25): 21A - 150A
  • Very Low Rds(on): 3.8 mOhms
  • dv/dt ruggedness, fast reverse diode
  • Low inductive current path
  • Kelvin source terminals for easy drive
  • 2500 V rms isolation with ceramic base plate

    • Dual Switch Common Source MOSFET Modules

    Product Table

  • Vdss: 70V - 200V
  • ID(25): 84A - 165A
  • Very Low Rds(on): 6.0 mOhms
  • Fast intrinsic diode. dv/dt ruggedness
  • Low inductive current path
  • Kelvin source terminals for easy drive
  • 2500 V rms isolation with ceramic base plate

    • Single Switch MOSFET Modules

    Product Table

  • Vdss: 100V - 500V
  • ID(25): 41A - 1245A
  • Extremely Low Rds(on): 1.35 mOhms
  • Fast intrinsic diode. dv/dt ruggedness
  • Low inductive current path
  • Kelvin source terminals for easy drive
  • 2500 V rms isolation with ceramic base plate

    • ISOPLUS-DIL™ Trench MOSFET Modules

    Product Table

  • Vdss: 40V to 150V
  • ID(25): up to 180A
  • Very low Rds(on)
  • Optimized fast intrinsic reverse diode
  • Tvj max: 175°C
  • Kelvin source terminals for easy drive
  • min. 1000 Vrms Isolation